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新能源与节能环保

  • 赵新生

    工作单位:江苏师范大学
    从事领域:清洁能源
    擅长领域:氢储能
    毕业院校:中国科学院大连化学物理研究所
    职称:教授
  • 详细内容

    研究方向:

    1. 高容量储氢制氢材料、储氢单元

    2. 质子交换膜燃料电池高性能低铂、非铂纳米催化剂

    3. 质子交换膜燃料电池催化层微观结构与电化学反应、物质传递及电池性能的耦合关系

    4. 高比能量燃料电池微电源系统

    主要成果:

    测量质子交换膜燃料电池翠花曾孔隙率的方法

    基于亲水多孔支撑体的复合质子交换膜的制备方法

    TiO2-Graphene复合材料的制备方法,发明专利

    氮掺杂碳/二氧化钛复合纤维载体的制备方法

    一种带有冷却系统的NaBH4溶液喷雾式设备

    一种耦合新型储氢单元的燃料电池系统

    一种质子交换膜燃料电池催化层中离子电阻测定方法

    代表性科研项目:

    1. Jie Qu, Yongan Yang , Xiaomin Shi, Wei Wang, Jianning Ding, Ningyi Yuan, Xinsheng Zhao*, Chao Lai, Scalable synthesis of ultrasmall SnO2 nanocrystals in carbon conductive matrices: High loading and excellent electrochemical performance, Journal of Alloys and Compounds,2016,686(25):122-129

    2. Xiguang Han, Xiao Han,Rong Li,a Linqiang Sun, Kai Lu, Mengyao Wu, Yuxuan Zhu,a and Xinsheng Zhao*, Porous Mn2O3 microcubes with exposed {001} facets as electrode for lithium ion batteries, New Journal of Chemistry,2016,DOI:  10.1039/C6NJ00032K.

    3. Wen-Qiang Zhang, Qiu-Yan Li, Quan Zhang, Yingqiao Lu, Han Lu, Wenguang Wang,Xinsheng Zhao and Xiao-Jun Wang, Robust Metal−Organic Framework Containing Benzoselenadiazole for Highly Efficient Aerobic Cross-dehydrogenative Coupling Reactions under Visible Light, Inorganic Chemistry,2016,55(3): 1005-1007

    4. Ling Bao Xing, Kai Xi, Qiuyan Li, Zhong Su, Chao Lai, Xinsheng Zhao, R. Vasant Kumar, Nitrogen, sulfur-codoped graphene sponge as electroactive carbon interlayer for high-energy and -power lithiumesulfur batteries, Journal of Power Sources,2016 ,303:22-28

    5. Zhongqing Jiang, Xinsheng Zhao, Xiaoning Tian,Lijuan Luo,Jianghua Fang ,Gao haoqi, Zhong Jie Jiang, Hydrothermal Synthesis of Boron and Nitrogen Codoped Hollow Graphene Microspheres with Enhanced Electrocatalytic Activity for Oxygen Reduction Reaction, Acs  Applied Materials & Interfaces,2015, 7(34):19398-19407

    6. Jianwei Li, Xinsheng Zhao,Xinjuan Liu,Xuejun Zheng,Xuexian Yang,and Zhe Zhu, Correlation between the band gap expansion and melting temperature depression of nanostructured semiconductors, J. Applied. Physics,2015,118, 124304

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